Abstract: In this letter, we present a compact model of ferroelectric field-effect-transistor (FEFET). The model consists of a ferroelectric (FE) capacitor model and a Berkeley Short-channel IGFET ...
Abstract: In this work, a novel 4F 2 VCT (vertical channel transistor) targeting for next generation of DRAM is proposed. We approached process feasibility and device performance of $\mathbf{4 F}^{2}$ ...
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